HSD-Series Axial Lead SiC High Voltage Diodes
HSD-Series Axial Lead SiC High Voltage Diodes
View productThe SLG20-05 fast recovery high voltage diode is a 20 kV, 500 mA axial-leaded rectifier with a 70 ns reverse recovery time, built for engineers who need dependable switching in insulating oil, insulating gas, or secondary packaging. HVDIODE acts as the high voltage diode supplier for teams that specify the part by model number, while the same factory operates as the high voltage diode manufacturer that controls the high thermal conductivity epoxy molding, the high temperature resistant chip, and the surge current testing behind every unit.
The SLG20-05 is an axial leaded fast recovery rectifier built around a high temperature resistant chip inside a molded epoxy body.
Package No. HVD509-1. The published ratings include a 20 kV repetitive peak backward voltage, a 500 mA average forward current, and a 70 ns backward recovery time.
Absolute maximum ratings and electrical characteristics as published for the SLG20-05 fast recovery high voltage diode.
Operating ambient temperature spans -40 °C to +175 °C, and storage temperature spans -40 °C to +150 °C.
| Parameter | Symbol | Unit | Test Conditions | Value |
|---|---|---|---|---|
| Repetitive Peak Backward Voltage | Vrrm | KV | Ta = 25 °C, Ir = 2.0 μA | 20 |
| Peak Working Backward Voltage | Vrwm | KV | Ta = 25 °C, Ir = 2.0 μA | 20 |
| Average Forward Current | If(AV) | mA | 50 Hz half-sine wave, resistance load, @ Tbreak = 50 °C | 500 |
| Backward Recovery Time | Trr | nS | — | 70 |
| Surge Forward Current | Ifsm | A | 0.01 s @ half-sine wave 50 Hz | 30 |
| Operating Ambient Temperature | Ta | °C | — | -40 to +175 |
| Storage Temperature | Tstg | °C | — | -40 to +150 |
| Forward Peak Voltage | Vfm | V | — | ≥22.0 |
| Backward Peak Current | Irrm1 | μA | @ Ta = 25 °C, VRM = VRRM | 2 |
| Backward Peak Current | Irrm2 | μA | @ Ta = 100 °C, VRM = VRRM | 20.0 |
Choosing a high-voltage diode is closely related to the usage environment. The product page recommends the following conditions.
For surface insulation treatment, the product page lists silicone, acrylic, urethane, and epoxy adhesives as general options.
Share your operating conditions, insulation medium, and target quantity so the SLG20-05 configuration can be confirmed before you order.
Keep adjacent product options together for a faster catalog comparison.
HSD-Series Axial Lead SiC High Voltage Diodes
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Ultra fast recovery high voltage rectifier diode for pulse DC conversion, compatible with high voltage diodes and bridge rectifier modules.
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2–5kV fast recovery high voltage rectifier diode for compact DC conversion, compatible with high voltage diodes and bridge rectifier systems.
View productthe slg20-05 is rated for a repetitive peak backward voltage (vrrm) of 20 kv and a peak working backward voltage (vrwm) of 20 kv, with a 500 ma average forward current measured at 50 hz half-sine wave, resistance load, at tbreak = 50 °c.
the backward recovery time (trr) is 70 ns, which supports high speed switching, and the surge forward current (ifsm) is 30 a for 0.01 s at half-sine wave 50 hz.
insulating oil and insulating gases are both recommended. secondary packaging is used where heat dissipation and other parameter performance requirements are high.
air cooling is advised because a small high-voltage diode can discharge more easily and heat dissipation in open air is average. for diodes used in exposed air, install them with insulated electrodes at both ends.
package no. hvd509-1. the diode uses an axial leaded connection with high thermal conductivity epoxy compound molding, a special high temperature resistant chip, and excellent surge current resistance.
the operating ambient temperature (ta) range is -40 °c to +175 °c, and the storage temperature (tstg) range is -40 °c to +150 °c.
